High Hole Mobility Si/Si_l-xGe_x/Si Heterostructure

High mobility Si/Si_l-xGe_x/Si p-type modulation-doped double heterostructures have been grown by RRH/VLP-CVD (rapid radiant heating/very low pressure-CVD). Hole Hall mobilities as high as about 300cm²/V.s(293 K) and 7500cm²/V.s(77K) have been obtained for heterostructures with x = 0.3. The variation of hole mobility with temperature and the influence of Ge fraction on hole mobility were investigated.