Growth Feature of Cubic Boron Nitride on c-BN Crystal Substrates

Cubic boron nitride (c-BN) films were deposited on highly-oriented (111) bulk c-BN crystal by using the rf magnetron sputtering method. The growth films are characterized by micro-Raman spectroscopy (μ-RS) and scanning electron microscopy (SEM). The results show that the high crystallization electron transparent c-BN films in thickness of about 10μm are obtained. Island and step growth models are clearly shown.