Growth Feature of Cubic Boron Nitride on c-BN Crystal Substrates
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Abstract
Cubic boron nitride (c-BN) films were deposited on highly-oriented (111) bulk c-BN crystal by using the rf magnetron sputtering method. The growth films are characterized by micro-Raman spectroscopy (μ-RS) and scanning electron microscopy (SEM). The results show that the high crystallization electron transparent c-BN films in thickness of about 10μm are obtained. Island and step growth models are clearly shown.
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YANG Da-Peng, SU Zuo-Peng, DU Yong-Hui, JI Xiao-Rui, YANG Xu-Xin, GONG Xi-Liang, ZHANG Tie-Chen. Growth Feature of Cubic Boron Nitride on c-BN Crystal Substrates[J]. Chin. Phys. Lett., 2006, 23(5): 1324-1326.
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YANG Da-Peng, SU Zuo-Peng, DU Yong-Hui, JI Xiao-Rui, YANG Xu-Xin, GONG Xi-Liang, ZHANG Tie-Chen. Growth Feature of Cubic Boron Nitride on c-BN Crystal Substrates[J]. Chin. Phys. Lett., 2006, 23(5): 1324-1326.
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YANG Da-Peng, SU Zuo-Peng, DU Yong-Hui, JI Xiao-Rui, YANG Xu-Xin, GONG Xi-Liang, ZHANG Tie-Chen. Growth Feature of Cubic Boron Nitride on c-BN Crystal Substrates[J]. Chin. Phys. Lett., 2006, 23(5): 1324-1326.
|
YANG Da-Peng, SU Zuo-Peng, DU Yong-Hui, JI Xiao-Rui, YANG Xu-Xin, GONG Xi-Liang, ZHANG Tie-Chen. Growth Feature of Cubic Boron Nitride on c-BN Crystal Substrates[J]. Chin. Phys. Lett., 2006, 23(5): 1324-1326.
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