Microstructural Characterization for Ge Clusters Embedded ina-SiNy Matrix Prepared by PECVD Method
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Abstract
We report the successful synthesis of Ge clusters embedded in a-SiNy : H matrix prepared by the plasma enhanced chemical vapor deposition (PECVD) method. Chemical and microstructural characteristics of this granular thin film were analyzed using the infrared absorption, x-ray diffraction, Raman scattering, and transmission electron microscopy. Finally we discuss briefly the synthesis mechanism of this new material.
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QU Xuexuan, CHEN Kunji, WANG Mingxiang, LI Zhifeng, XIA Hua, FENG Duan. Microstructural Characterization for Ge Clusters Embedded ina-SiNy Matrix Prepared by PECVD Method[J]. Chin. Phys. Lett., 1994, 11(4): 253-256.
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QU Xuexuan, CHEN Kunji, WANG Mingxiang, LI Zhifeng, XIA Hua, FENG Duan. Microstructural Characterization for Ge Clusters Embedded ina-SiNy Matrix Prepared by PECVD Method[J]. Chin. Phys. Lett., 1994, 11(4): 253-256.
|
QU Xuexuan, CHEN Kunji, WANG Mingxiang, LI Zhifeng, XIA Hua, FENG Duan. Microstructural Characterization for Ge Clusters Embedded ina-SiNy Matrix Prepared by PECVD Method[J]. Chin. Phys. Lett., 1994, 11(4): 253-256.
|
QU Xuexuan, CHEN Kunji, WANG Mingxiang, LI Zhifeng, XIA Hua, FENG Duan. Microstructural Characterization for Ge Clusters Embedded ina-SiNy Matrix Prepared by PECVD Method[J]. Chin. Phys. Lett., 1994, 11(4): 253-256.
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