THE DEEP LEVELS IN GaSb/AlSb(00l) SUPERLATTICES
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Abstract
The electronic states, especially the deep levels of the defects in GaSb/AlSb (001) superlattices have been calculated. The band gap becomes larger and the donor binding energy becomes deeper with the decrease of the quantum well width. The impurity deep levels exhibit a position dependent relation.
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HUANG Mingzhu, GU Yiming, REN Shangyuan. THE DEEP LEVELS IN GaSb/AlSb(00l) SUPERLATTICES[J]. Chin. Phys. Lett., 1987, 4(6): 253-256.
HUANG Mingzhu, GU Yiming, REN Shangyuan. THE DEEP LEVELS IN GaSb/AlSb(00l) SUPERLATTICES[J]. Chin. Phys. Lett., 1987, 4(6): 253-256.
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HUANG Mingzhu, GU Yiming, REN Shangyuan. THE DEEP LEVELS IN GaSb/AlSb(00l) SUPERLATTICES[J]. Chin. Phys. Lett., 1987, 4(6): 253-256.
HUANG Mingzhu, GU Yiming, REN Shangyuan. THE DEEP LEVELS IN GaSb/AlSb(00l) SUPERLATTICES[J]. Chin. Phys. Lett., 1987, 4(6): 253-256.
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