Role of Residual O₂ in Fabrication of A1-MgF₂-Au(Cu) Thin Film Devices

After the light emitting device Al-MgF₂-Au (Cu) junction was reported, we made a further investigation about its structure, high voltage-resistance, explaination of l-V characteristic and mechanism of light emission of these junctions through analyzing in detail. The residual O₂ during fabricating the junctions plays an important role in the properties of the junctions.