High Spectral Resolution Mo/Si Multilayers Working at High Order Reflection
-
Abstract
The high reflectance orders are used to improve the spectral resolution of Mo/Si multilayers. The multilayers for the first-, second- and third-order reflectance are designed and optimized, respectively. These multilayers are fabricated by using a directed current magnetron sputtering system, and the reflectivity is measured in an extreme ultraviolet range by synchrotron radiation. The experimental results show that the spectral resolution λ/Δλ (λ=14nm) increases from 24.6 for the first order to 66.6 for the third order.
-
References
-
Related Articles
[1] PAN Jiang-Hong, LIU Li-Zhe, LIU Min. Hydrogenic-Donor Impurity States in GaAs/Al xGa 1−xAs Quantum Dots in the Presence of an Electric Field [J]. Chin. Phys. Lett., 2011, 28(8): 086201. doi: 10.1088/0256-307X/28/8/086201 [2] REN Guo-Zhong, LIU Yang, MA Hong-An, SU Tai-Chao, LIN Le-Jing, DENG Le, JIANG Yi-Ping, ZHENG Shi-Zhao, JIA Xiao-Peng. Thermoelectric Properties of Te-Doped Ba0.32Co4Sb12−xTexPrepared at HPHT [J]. Chin. Phys. Lett., 2011, 28(4): 048401. doi: 10.1088/0256-307X/28/4/048401 [3] YUE Fang-Yu, CHEN Lu, WU Jun, HU Zhi-Gao, LI Ya-Wei, YANG Ping-Xiong, CHU Jun-Hao. Impurity Activation in MBE-Grown As-Doped HgCdTe by Modulated Photoluminescence Spectra [J]. Chin. Phys. Lett., 2009, 26(4): 047804. doi: 10.1088/0256-307X/26/4/047804 [4] LIAN Shi-yang. Bound Phonons and Bistability of Donors in Gal-xA1xAs: Te [J]. Chin. Phys. Lett., 1996, 13(6): 461-464. [5] WENG Yumin, LIN Song, ZONG Xiangfu. Mapping the Uniformity of Deep Level Defects Distribution by Scanning Photoluminescence [J]. Chin. Phys. Lett., 1991, 8(7): 380-383. [6] CHEN Zhenghao, CUI Dafu, ZHOU Junming, PAN Shaohua, HUANG Qi, ZHOU Yueliang, LÜ Huibin, XIE Yuanlin, FENG Simin, YANG Guozhen. STUDY OF THE PROPERTIES OF INFRARED INTERSUBBANDTRANSITION IN DOPED GaAs/A1xGa1-xAs MULTIPLE QUANTUM WELLS [J]. Chin. Phys. Lett., 1990, 7(7): 319-322. [7] CHENG Wenqin, HUANG Yi, ZHOU Junming, FENG Wei, WANG Hezhou, SHE Weilong, HUANG Xuguang, LIN Weizhu, YU Zhenxin, XU Geng. TRANSIENT PHOTOLUMINESCENCE SPECTRA OF GaAsIAlGaAsQUANTUM WELLS, QUANTUM WELL WIRES, AND QUANTUM WELL BOXES [J]. Chin. Phys. Lett., 1990, 7(6): 284-287. [8] ZHANG Wenqing, HUANG Qisheng, KANG Junyong. DEEP DONOR LEVELS IN Te-DOPED GaAsP ALLOY [J]. Chin. Phys. Lett., 1990, 7(3): 129-132. [9] QIAN Shixiong, YUAN Shu, LI Yufen, T.G .Andersson, CHEN Zonggui, PENG Wenji, YU Zhenxin. TIME-RESOLVED PHOTOLUMINESCENCE FROM InxGa1-xAs/GaAs SINGLE QUANTUM WELL [J]. Chin. Phys. Lett., 1989, 6(12): 559-562. [10] TANG Yinsheng, JIANG Desheng. PHOTOREFLECTANCE OF TWO-DIMENSIONAL ELECTRON GAS IN THE SELECTIVELY DOPED GaAS /AlXGa1-XAs HETEROSTRUCTURE GROWN BY MOLECULAR BEAM EPITAXY [J]. Chin. Phys. Lett., 1987, 4(6): 283-285.
DownLoad: