Sil-xGex/Si Single-Mode Rib Waveguides with 0.5 dB/cm by Molecular Beam Epitaxy
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Abstract
Sil-xGex/Si single-mode rib waveguides with 0.5dB/cm losses have been fabricated, in which the SiGe layers are grown by molecular beam epitaxy. The single-mode waveguide dimensions determined experimentally are consistent with the single-mode theory of SiGe waveguides.
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GAO Yong, LIU Enke, LI Guozheng, LIU Xiding, ZHANG Xiangjiu, LU Xuekun, WANG Xun. Sil-xGex/Si Single-Mode Rib Waveguides with 0.5 dB/cm by Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 1994, 11(12): 734-736.
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GAO Yong, LIU Enke, LI Guozheng, LIU Xiding, ZHANG Xiangjiu, LU Xuekun, WANG Xun. Sil-xGex/Si Single-Mode Rib Waveguides with 0.5 dB/cm by Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 1994, 11(12): 734-736.
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GAO Yong, LIU Enke, LI Guozheng, LIU Xiding, ZHANG Xiangjiu, LU Xuekun, WANG Xun. Sil-xGex/Si Single-Mode Rib Waveguides with 0.5 dB/cm by Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 1994, 11(12): 734-736.
|
GAO Yong, LIU Enke, LI Guozheng, LIU Xiding, ZHANG Xiangjiu, LU Xuekun, WANG Xun. Sil-xGex/Si Single-Mode Rib Waveguides with 0.5 dB/cm by Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 1994, 11(12): 734-736.
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