Si_l-xGe_x/Si Single-Mode Rib Waveguides with 0.5 dB/cm by Molecular Beam Epitaxy

Si_l-xGe_x/Si single-mode rib waveguides with 0.5dB/cm losses have been fabricated, in which the SiGe layers are grown by molecular beam epitaxy. The single-mode waveguide dimensions determined experimentally are consistent with the single-mode theory of SiGe waveguides.