Anticrossing Due to Resonant Coupling of Hole Levels in Asymmetric Coupled- Quantum- Wells

We present distinct evidence of anticrossing behavior for excitonic transitions due to resonant coupling of heavy-hole ground levels in a biased GaAs/Al_0.35 Ga_0.65As/GaAs (50/40/100Å) asymmetric coupled-double-quantum-wells p-i-n structure by using photoluminescence spectra. The minimum level splitting is about 2.5meV.