Anticrossing Due to Resonant Coupling of Hole Levels in Asymmetric Coupled- Quantum- Wells
-
Abstract
We present distinct evidence of anticrossing behavior for excitonic transitions due to resonant coupling of heavy-hole ground levels in a biased GaAs/Al0.35 Ga0.65As/GaAs (50/40/100Å) asymmetric coupled-double-quantum-wells p-i-n structure by using photoluminescence spectra. The minimum level splitting is about 2.5meV.
Article Text
-
-
-
About This Article
Cite this article:
XU Shijie, JIANG Desheng, LI Guohua, ZHANG Yaohui, LUO Jinsheng. Anticrossing Due to Resonant Coupling of Hole Levels in Asymmetric Coupled- Quantum- Wells[J]. Chin. Phys. Lett., 1993, 10(7): 433-436.
|
XU Shijie, JIANG Desheng, LI Guohua, ZHANG Yaohui, LUO Jinsheng. Anticrossing Due to Resonant Coupling of Hole Levels in Asymmetric Coupled- Quantum- Wells[J]. Chin. Phys. Lett., 1993, 10(7): 433-436.
|
XU Shijie, JIANG Desheng, LI Guohua, ZHANG Yaohui, LUO Jinsheng. Anticrossing Due to Resonant Coupling of Hole Levels in Asymmetric Coupled- Quantum- Wells[J]. Chin. Phys. Lett., 1993, 10(7): 433-436.
|
XU Shijie, JIANG Desheng, LI Guohua, ZHANG Yaohui, LUO Jinsheng. Anticrossing Due to Resonant Coupling of Hole Levels in Asymmetric Coupled- Quantum- Wells[J]. Chin. Phys. Lett., 1993, 10(7): 433-436.
|
DownLoad: