Optoelectronic Properties Modulated by Means of Change in Lattice Sites of Impurity in LiNbO3 Crystals
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Abstract
This paper discusses the actual possibility of altering artificially certain optoelectronic properties of LiNbO3 crystals by means of change in lattice site of a few Me3+ ions in the crystals. A new lattice site Cr3+ defect in Cr-doped LiNbO3 vapour transport equilibration has been displayed as a practical example. -