Ar Ion Implantation Induced Tc Degradation of YBa2Cu3O7-x Thin Films
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Abstract
The Ar ion implantation induced changes of structure and transport properties of YBa2Cu3O7-x thin films were studied as a function of fluence. Both the zero resistance temperature Tc and the critical current density Jc decrease rapidly with fluence, however, the transition temperature onset almost remains constant at low fluences. At dose of 1.2x1013Ar/cm2, the sample has a metal to semiconductor phase transition. When the fluence further increases, a crystalline to amorphous phase transition occurs, and the sample becomes insulator.
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References
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