DEEP DONOR LEVELS IN Te-DOPED GaAsP ALLOY

Deep donor levels in Te-doped GaAs_1-xP_x for a large range of compositions have been studied by deep level transient spectroscopy (DLTS). Three kinds of deep levels A, B, and C were observed. Only level A appears in all the samples; it is considered that level A is originated from DX centers. No any regularity of presentation for levels B and C was able to find. Their properties are probably more complicated.