PREPARATION AND CHARACTERIZATION OF HEAVILY DOPED μc-Si:F:H FILMS BY WINDOWLESS PHOTO-CVD
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Abstract
A novel μc-Si:F:H film growth technique has been developed using a windowless photo-enhanced chemical vapor deposition (photo-CVD) system. The films contain of two phases with the microcrystallites embedded in amorphous materials. The films contain the crystallites with volume of fraction of 0.17-0.23 and average grain size of 32-85nm. The conductivity up to 16(Ω.cm)-1 and gauge factor (GF) of about 12 are obtained.
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GUO shuwen, TAN shongsheng, WANG Weiyuan. PREPARATION AND CHARACTERIZATION OF HEAVILY DOPED μc-Si:F:H FILMS BY WINDOWLESS PHOTO-CVD[J]. Chin. Phys. Lett., 1989, 6(12): 563-565.
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GUO shuwen, TAN shongsheng, WANG Weiyuan. PREPARATION AND CHARACTERIZATION OF HEAVILY DOPED μc-Si:F:H FILMS BY WINDOWLESS PHOTO-CVD[J]. Chin. Phys. Lett., 1989, 6(12): 563-565.
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GUO shuwen, TAN shongsheng, WANG Weiyuan. PREPARATION AND CHARACTERIZATION OF HEAVILY DOPED μc-Si:F:H FILMS BY WINDOWLESS PHOTO-CVD[J]. Chin. Phys. Lett., 1989, 6(12): 563-565.
|
GUO shuwen, TAN shongsheng, WANG Weiyuan. PREPARATION AND CHARACTERIZATION OF HEAVILY DOPED μc-Si:F:H FILMS BY WINDOWLESS PHOTO-CVD[J]. Chin. Phys. Lett., 1989, 6(12): 563-565.
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