THEORY OF THE <100> UNIAXIAL STRESS DEPENDENCE OF THE DEEP LEVELS IN Gap and GaAs
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Abstract
We extend previous theoretical work to predict the derivatives with respect to the <100> uniaxial stress of the substitutional deep point defect energy levels in Gap and GaAs which, for a defect at a specific site producing a level of particular symmetry, can be evaluated as a function of their energy levels in the band gap.
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References
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