DEPTH PROFILES OF BROMINE IN 79Br+ ION IMPLANTED Pb1-xSnxTe OBTAINED BY SIMS MEASUREMENT AND THEORETICAL CALCULATION
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Abstract
The depth profile of Br in 79Br+ ion implanted lead-tin-telluride, Pb1-xSnxTe, was obtained by secondary ion mass spectrometry(SIMS). The SIMS profile has been compared with that obtained by our theoretical calculation, in which a more realistic interatomic potential and reasonable electronic stopping power were used. The SIMS result agrees well with the theoretical calculation.
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XIA Yueyuan(Y.Y.HSIA), TAN Chunyu, WANG Yihua, HU Xierong, XU qianwei. DEPTH PROFILES OF BROMINE IN 79Br+ ION IMPLANTED Pb1-xSnxTe OBTAINED BY SIMS MEASUREMENT AND THEORETICAL CALCULATION[J]. Chin. Phys. Lett., 1986, 3(8): 337-340.
XIA Yueyuan(Y.Y.HSIA), TAN Chunyu, WANG Yihua, HU Xierong, XU qianwei. DEPTH PROFILES OF BROMINE IN 79Br+ ION IMPLANTED Pb1-xSnxTe OBTAINED BY SIMS MEASUREMENT AND THEORETICAL CALCULATION[J]. Chin. Phys. Lett., 1986, 3(8): 337-340.
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XIA Yueyuan(Y.Y.HSIA), TAN Chunyu, WANG Yihua, HU Xierong, XU qianwei. DEPTH PROFILES OF BROMINE IN 79Br+ ION IMPLANTED Pb1-xSnxTe OBTAINED BY SIMS MEASUREMENT AND THEORETICAL CALCULATION[J]. Chin. Phys. Lett., 1986, 3(8): 337-340.
XIA Yueyuan(Y.Y.HSIA), TAN Chunyu, WANG Yihua, HU Xierong, XU qianwei. DEPTH PROFILES OF BROMINE IN 79Br+ ION IMPLANTED Pb1-xSnxTe OBTAINED BY SIMS MEASUREMENT AND THEORETICAL CALCULATION[J]. Chin. Phys. Lett., 1986, 3(8): 337-340.
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