BACKSCATTERING AND CHANNELING STUDY OF ZINC IMPLANTED SILICON
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Abstract
The depth of the amorphous-crystalline interface for 1 x 1015 to 1x1017Zn/cm2 ions in silicon has been measured by high resolution backscattering technique. The variation of this interface depth with fluency is found to agree well with the creation and overlap model of the simple direct amorphous zone.
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References
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