ELECTRICAL RESISTANCE AND ACTIVATION ENERGY OF AMORPHOUS Ni-Si-B ALLOY FILM
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Abstract
The sheet resistance Rs and temperature coefficient of resistance (TCR) α (25-100°C) of amorphous Ni68Si15B17 films have been measured. The structure of films with Rs between 80-550Ω/sq. are more stable and have a lower TCR ( 10-6K-1-10-5K-1). In this range of Rs, TCR may change its sign, and the activation energy is much larger.
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CHENG Xianan, SONG Ruan, CHEN Bingyu, WANG Xuwei, CHEN Jinchang. ELECTRICAL RESISTANCE AND ACTIVATION ENERGY OF AMORPHOUS Ni-Si-B ALLOY FILM[J]. Chin. Phys. Lett., 1986, 3(9): 393-396.
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CHENG Xianan, SONG Ruan, CHEN Bingyu, WANG Xuwei, CHEN Jinchang. ELECTRICAL RESISTANCE AND ACTIVATION ENERGY OF AMORPHOUS Ni-Si-B ALLOY FILM[J]. Chin. Phys. Lett., 1986, 3(9): 393-396.
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CHENG Xianan, SONG Ruan, CHEN Bingyu, WANG Xuwei, CHEN Jinchang. ELECTRICAL RESISTANCE AND ACTIVATION ENERGY OF AMORPHOUS Ni-Si-B ALLOY FILM[J]. Chin. Phys. Lett., 1986, 3(9): 393-396.
|
CHENG Xianan, SONG Ruan, CHEN Bingyu, WANG Xuwei, CHEN Jinchang. ELECTRICAL RESISTANCE AND ACTIVATION ENERGY OF AMORPHOUS Ni-Si-B ALLOY FILM[J]. Chin. Phys. Lett., 1986, 3(9): 393-396.
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