ELECTRICAL RESISTANCE AND ACTIVATION ENERGY OF AMORPHOUS Ni-Si-B ALLOY FILM

The sheet resistance R_s and temperature coefficient of resistance (TCR) α (25-100°C) of amorphous Ni₆₈Si₁₅B₁₇ films have been measured. The structure of films with R_s between 80-550Ω/sq. are more stable and have a lower TCR ( 10^-6K^-1-10^-5K^-1). In this range of R_s, TCR may change its sign, and the activation energy is much larger.