AMORPHOUS PHASE FORMATION OF Mo1-xGex, Mo1-xSix, FILMS AND THEIR SUPERCONDUCTING PROPERTIES
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Abstract
Mo1-xGex, Mo1-xSix, films were prepared by getter sputtering onto liquid nitrogen cooled substrates. The amorphous phase formations were Ge > 22 at . % , Si > 18 at .% respectively. With the increase of Ge, Si content, Tc decreased from 6 to 3K in the amorphous state. The measured results of (dBc2/dT)Tc , Jc and ρ( 300K) /ρ(8K) indicated that the four chosen Mo1-xSix films exhibit fundamental characteristics of amorphous superconductors.
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