X-RAY MEASUREMENT OF THE GRAIN SIZES OF WSi2 FORMED IN COSPUTTERED W-Si FILMS
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Abstract
The broadening of X-ray diffraction peaks has been used successfully to measure the grain sizes of WSi2 in cosputtered W-Si films after annealing. The grain size of WSi2 increases with annealing temperature and reaches 115nm after annealing at 1000°C. The grain sizes are quite similar to that obtained by transmission electron microscope in electron beam coevaporated film and low pressure chemical vapor deposited film.
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References
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