THE INFLUENCE OF O₂ ON THE ELECTRONIC STRUCTURE OF CLEAN AND ION SPUTTERED SURFACES OF 2H-MoS₂(0001)

UPS, XPS, AES and LEED have been applied to the study on the scmrples prepared by low energy N⁺(0.5KeV) sputtering of the clean cleavaged surface of 2H-MoS₂ (0001). A new "shoulder" of a band tail above the top of the d_z² band shows that the surface is chemically active to O₂ at room temperature, The causes for the chemical activeness have been analyzed.