THE INFLUENCE OF O2 ON THE ELECTRONIC STRUCTURE OF CLEAN AND ION SPUTTERED SURFACES OF 2H-MoS2(0001)
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Abstract
UPS, XPS, AES and LEED have been applied to the study on the scmrples prepared by low energy N+(0.5KeV) sputtering of the clean cleavaged surface of 2H-MoS2 (0001). A new "shoulder" of a band tail above the top of the dz2 band shows that the surface is chemically active to O2 at room temperature, The causes for the chemical activeness have been analyzed.
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