THE INFLUENCE OF O2 ON THE ELECTRONIC STRUCTURE OF CLEAN AND ION SPUTTERED SURFACES OF 2H-MoS2(0001)
-
Abstract
UPS, XPS, AES and LEED have been applied to the study on the scmrples prepared by low energy N+(0.5KeV) sputtering of the clean cleavaged surface of 2H-MoS2 (0001). A new "shoulder" of a band tail above the top of the dz2 band shows that the surface is chemically active to O2 at room temperature, The causes for the chemical activeness have been analyzed.
Article Text
-
-
-
About This Article
Cite this article:
HU Yong-jun, LIN Zhang-da, WANG Chang-heng, XIE Kan. THE INFLUENCE OF O2 ON THE ELECTRONIC STRUCTURE OF CLEAN AND ION SPUTTERED SURFACES OF 2H-MoS2(0001)[J]. Chin. Phys. Lett., 1985, 2(4): 157-160.
|
HU Yong-jun, LIN Zhang-da, WANG Chang-heng, XIE Kan. THE INFLUENCE OF O2 ON THE ELECTRONIC STRUCTURE OF CLEAN AND ION SPUTTERED SURFACES OF 2H-MoS2(0001)[J]. Chin. Phys. Lett., 1985, 2(4): 157-160.
|
HU Yong-jun, LIN Zhang-da, WANG Chang-heng, XIE Kan. THE INFLUENCE OF O2 ON THE ELECTRONIC STRUCTURE OF CLEAN AND ION SPUTTERED SURFACES OF 2H-MoS2(0001)[J]. Chin. Phys. Lett., 1985, 2(4): 157-160.
|
HU Yong-jun, LIN Zhang-da, WANG Chang-heng, XIE Kan. THE INFLUENCE OF O2 ON THE ELECTRONIC STRUCTURE OF CLEAN AND ION SPUTTERED SURFACES OF 2H-MoS2(0001)[J]. Chin. Phys. Lett., 1985, 2(4): 157-160.
|
DownLoad: