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Growth and Characterization of Modulation-DopedAlxGa1-xN/GaN Heterostructures

  • 1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 2Research Center for Advanced Science and Technology, and Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan

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  • Published Date: December 31, 2000
    Abstract
  • The modulation-doped Al0.22Ga0.78N/GaN heterostructures with different Al0.22Ga0.78N barrier thicknesses were grown by means of metal--organic chemical vapour deposition. The Al0.22Ga0.78N layer still has pseudomorphic growth when its thickness is 53nm. The mobility of the two-dimensional electron gas (2DEG) at the heterointerfaces is much higher than that of the electrons in GaN films at both 300 and 77K. The dramatic decrease of the 2DEG mobility in an Al0.22Ga0.78N/GaN heterostructure corresponds to the partial relaxation of the Al0.22Ga0.78N barrier.


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