A New Silicon-Based Ferroelectric Sandwich Structure
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Abstract
A new silicon-based PbTiO3/Pb(Zr0.53Ti0.47)O3/PbTiO3 sandwich structure is fabricated by a sol--gel method. Compared with other fabrication processes without PbTiO3 buffer layers, the annealing temperature is greatly reduced by as much as 100°C. Capacitance--voltage, polarization--electric field and dielectric--frequency properties of this sandwich structure are studied. The Pb(ZrxTi1-x)O3 films are proved to have good dielectric and ferroelectric properties.
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