Photoluminescent Properties of ZnO Films Deposited on Si Substrates

The photoluminescence of ZnO films deposited on Si substrates by reactive dc sputtering has been studied by using a synchrotron radiation(SR) light source. The excitation spectra show a strong excitation band around 195 nm related to 390 nm emission band. Under SR vacuum ultraviolet excitation, a new emission band peaked at 290 nm was found for the first time, besides the ultraviolet emission band (390 nm) and green band (520 nm).