Dependence of 1.54-μm Photoluminescence on Excess-Si Degrees of Er-Doped Si-Rich SiO₂ Films Deposited by MagnetronSputtreing

Room-temperature 1.54-μm photoluminescence (PL) is observed from Er-doped Si-rich SiO₂ (SiO₂:Si:Er) films deposited by using the magnetron sputtering technique. To determine the optimum Si content in the SiO₂: Si: Er films, the percentage area of the Si target in the composite SiO₂-Si-Er target was changed from 0, to 10%, 20% and 30%. The percentage area of the Er target was fixed at 1%. It is found that the optimum annealing temperatures for Er³⁺ luminescence intensities are 900°C for the SiO₂:Er film and 900, 800, and 700°C for the SiO₂:Si:Er films containing 10%, 20% and 30% excess-Si (percentage areas of Si target), respectively. The SiO₂:Si:Er film containing 20% excess-Si and annealed at 800°C has the intensest PL.