Preparation of AlN Films by Ion-Beam-Enhanced Deposition

Aluminum nitride (AlN) films have been synthesized on Si(100)
substrates by ion-beam-enhanced deposition. Spreading resistance profile results suggest that the spreading resistance decreases with increasing rates of Al evaporation. If the evaporation rate of Al is higher than 2.5Å/s, the quality of AlN film will greatly deteriorate. The spreading resistance of the best quality film deposited at 0.5Å/s rate of Al was larger than 10⁸Ω. X-ray photoelectron spectroscopy measurements indicate the formation of AlN films at 0.5 and 1.0Å/s evaporation rate of Al. With the increasing evaporation rate of Al, the ratio of N to Al is decreased. When deposited at 0.5 and 1.0Å/s evaporation rates of Al, the ratio of N to Al was 0.402:1 and 0.250:1, respectively. Atomic force microscopy observation also exhibits that the surface of the AlN film formed at 0.5Å/s rate is smoother and more uniform than that formed at 1.0Å/s.