Electron States of Few-Electron Quantum Dots
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Abstract
We study few-electron semiconductor quantum dots using the unrestricted Hartree-Fock-Roothaan method based on the Gaussian Basis. Our emphasis is on the energy level calculation for quantum dots. The confinement potential in a quantum dot is assumed to be in a form of three-dimensional spherical finite potential well. Some valuable results, such as the rearrangement of the energy level, have been obtained.
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DAI Zhen-Hong, SUN Jin-Zuo, ZHANG Li-De, LI Zuo-Hong, HUANG Shi-Yong, SUI Peng-Fei. Electron States of Few-Electron Quantum Dots[J]. Chin. Phys. Lett., 2002, 19(1): 117-119.
DAI Zhen-Hong, SUN Jin-Zuo, ZHANG Li-De, LI Zuo-Hong, HUANG Shi-Yong, SUI Peng-Fei. Electron States of Few-Electron Quantum Dots[J]. Chin. Phys. Lett., 2002, 19(1): 117-119.
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DAI Zhen-Hong, SUN Jin-Zuo, ZHANG Li-De, LI Zuo-Hong, HUANG Shi-Yong, SUI Peng-Fei. Electron States of Few-Electron Quantum Dots[J]. Chin. Phys. Lett., 2002, 19(1): 117-119.
DAI Zhen-Hong, SUN Jin-Zuo, ZHANG Li-De, LI Zuo-Hong, HUANG Shi-Yong, SUI Peng-Fei. Electron States of Few-Electron Quantum Dots[J]. Chin. Phys. Lett., 2002, 19(1): 117-119.
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