A Silicon-Based Ferroelectric Capacitor for Memory Devices

We study a silicon-based PbTiO₃/Pb(Zr_0.53Ti_0.47)O₃/PbTiO₃ capacitor, prepared by an improved sol-gel method. The ferroelectric capacitor, with high remanent polarization of 15μC/cm² at a coercive field of about 30kV/cm, an ultra-low leakage current density of 0.1nA/cm², and almost fatigue free properties, It can be used as a promising candidate for ferroelectric memory devices.