Dependence of Tunnel Resistance on the Injection Current of Magnetic Tunnel Junctions
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Abstract
Anomalous transport behaviour, i.e., the dependence of the tunnel resistance on the injection current, has been discovered in Ta/Co/Al2O3/FeNi tunnel junctions. The zero field voltage-current characteristic of the magnetic tunneling junction obeys the transport principle of the normal tunnel junction at low injection current, but it exhibits the negative resistance behaviour when the injection current is raised to the breakover current level. The physics of the restorable electric breakdown has been initially studied.
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LIU Cun-Ye, LI Jian, CHEN Jian-Yong, XU Qing-Yu, NI Gang, DU You-Wei. Dependence of Tunnel Resistance on the Injection Current of Magnetic Tunnel Junctions[J]. Chin. Phys. Lett., 2002, 19(3): 398-401.
LIU Cun-Ye, LI Jian, CHEN Jian-Yong, XU Qing-Yu, NI Gang, DU You-Wei. Dependence of Tunnel Resistance on the Injection Current of Magnetic Tunnel Junctions[J]. Chin. Phys. Lett., 2002, 19(3): 398-401.
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LIU Cun-Ye, LI Jian, CHEN Jian-Yong, XU Qing-Yu, NI Gang, DU You-Wei. Dependence of Tunnel Resistance on the Injection Current of Magnetic Tunnel Junctions[J]. Chin. Phys. Lett., 2002, 19(3): 398-401.
LIU Cun-Ye, LI Jian, CHEN Jian-Yong, XU Qing-Yu, NI Gang, DU You-Wei. Dependence of Tunnel Resistance on the Injection Current of Magnetic Tunnel Junctions[J]. Chin. Phys. Lett., 2002, 19(3): 398-401.
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