Interfacial Properties of AlN/Si(111) Grown by Metal-OrganicChemical Vapor Deposition

We have studied the interfacial structures of AlN/Si(111) grown by metal-organic 0chemical vapor deposition. X-ray photoelectron spectrum and Auger electron spectrum were employed to analyse the components and chemical structures of AlN/Si(111). The results indicated that a mix-crystal transition region, approximately 12nm, was present between AlN film and Si substrate and it was composed of AlN and Si₃N₄. After analysis we found the existence of Si₃N₄ could not be avoided in AlN/Si(111) interface because of strong diffusion at 1070°C. Even in AlN layer Si-N bonds, Si-Si bonds can be found.