Characterization of Femtosecond Low-Temperature-Grown GaAs Photoconductive Switch

A photoconductive response time, As short as 350 fs, of a
low-temperature-grown GaAs (LT-GaAs) micro-coplanar photoconductive switch has been measured and modeled to the ultrafast trapping of the photoexcited carriers in LT-GaAs. The coherent interference of the pump and probe pulses results in a narrow spike photocurrent autocorrelation signal which maps the femtosecond optical pulses.