Lattice Strain Induced by Ion Implantation in AlGaAs/AlGaInAs Quantum Well Samples

Si⁺ ions of 350 keV have been implanted into AlGaAs/AlGaInAs quantum well samples in the dose range from 5 x 10¹³cm^-2 to 5 x 10¹⁴cm^-2. The Raman spectra and high resolution x-ray diffraction (HRXRD) were measured from these implanted samples as well as the un-implanted one. In the implanted layers the average strain which was evaluated by HRXRD increases with the implantation doses and varies from 0.0011 to 0.0029. The quantum well interface intermixing effect and compositional modification also observed from HRXRD. At the higher doses, an abnormal annealing procedure takes place and it partly removes damage, but the strain is kept almost unchanged in the epilayers.