Splitting Behaviour of Implanted MeV Au⁺ Ions in LiB₃O₅

The diffusion behaviour of 1.0 and 2.0MeV Au⁺ implanted into LiB₃O₅ single crystal has been studied by the Rutherford backscattering of 2.1 MeV He ions. Annealing was performed at temperatures of 600, 700, and 800°C each for 30min. The results show that the diffusion behaviour is quite different in two cases. In LiB₃O₅, the depth distribution of the 1.0 MeV Au is nearly Gaussian and becomes bimodal after annealing at 800°C for 30min. But in the case of 2.0MeV, the depth distribution of as implanted Au⁺ in LiB₃O₅ has splitting behaviour. After 800°C for 30min annealing, there is no obvious diffusion observed. The precise interpretation is needed.