EFFECT OF HEAVY DOPING ON THE OPTICAL SPECTRA OF SILICON
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Abstract
In this paper reflectance (R) and thermoreflectance (TR) spectra in heavily doped silicon concerning both interband and intraband transitions are reported and discussed. The heavily doped sample shows a red-shift and lifetime broadening in the two singularrities E1 (~3.4eV) and E2(~4.5eV). The values of the scattering time τ extracted from the reflectivity fit are obtained and compared with those obtained from Hall mobility measurements.
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