A New Silicon-on-Insulator Structure of Metal-Oxide-Semiconductor Field Effect Transistor to Reduce Self-Heating Effect
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Abstract
A new silicon-on-insulator (SOI) device structure is proposed. This new design provides a new path to reduce the temperature of the channel of SOI metal-oxide-semiconductor field effect transistor (MOSFET). The device has been verified in two-dimensional device simulation. The new structure reduces the self-heating effect of SOI MOSFET and decreases the negative differential transconductance.
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LIN Qing, ZHANG Zheng-Xuan, ZHU Ming, XIE Xin-Yun, SONG Hua-Qing, LIN Cheng-Lu. A New Silicon-on-Insulator Structure of Metal-Oxide-Semiconductor Field Effect Transistor to Reduce Self-Heating Effect[J]. Chin. Phys. Lett., 2003, 20(1): 158-160.
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LIN Qing, ZHANG Zheng-Xuan, ZHU Ming, XIE Xin-Yun, SONG Hua-Qing, LIN Cheng-Lu. A New Silicon-on-Insulator Structure of Metal-Oxide-Semiconductor Field Effect Transistor to Reduce Self-Heating Effect[J]. Chin. Phys. Lett., 2003, 20(1): 158-160.
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LIN Qing, ZHANG Zheng-Xuan, ZHU Ming, XIE Xin-Yun, SONG Hua-Qing, LIN Cheng-Lu. A New Silicon-on-Insulator Structure of Metal-Oxide-Semiconductor Field Effect Transistor to Reduce Self-Heating Effect[J]. Chin. Phys. Lett., 2003, 20(1): 158-160.
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LIN Qing, ZHANG Zheng-Xuan, ZHU Ming, XIE Xin-Yun, SONG Hua-Qing, LIN Cheng-Lu. A New Silicon-on-Insulator Structure of Metal-Oxide-Semiconductor Field Effect Transistor to Reduce Self-Heating Effect[J]. Chin. Phys. Lett., 2003, 20(1): 158-160.
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