P-Type Doping of GaN by Mg⁺ Implantation

Mg⁺ and Mg⁺ + P⁺ were introduced into GaN by ion implantation. The structure and crystalline quality of the GaN samples were analysed by Rutherford backscattering and channeling spectrometry before (X_min = 1.6%) and after implantation (X_min = 4.1%). X-ray diffraction reveals the existence of implantation-induced damage in the case of post-implantation followed by rapid thermal annealing. The resistivity, average factor, carrier concentration and carrier mobility were measured by the Hall effect. The transformation from n-type to p-type for GaN was observed.