P-Type Doping of GaN by Mg+ Implantation
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Abstract
Mg+ and Mg+ + P+ were introduced into GaN by ion implantation. The structure and crystalline quality of the GaN samples were analysed by Rutherford backscattering and channeling spectrometry before (Xmin = 1.6%) and after implantation (Xmin = 4.1%). X-ray diffraction reveals the existence of implantation-induced damage in the case of post-implantation followed by rapid thermal annealing. The resistivity, average factor, carrier concentration and carrier mobility were measured by the Hall effect. The transformation from n-type to p-type for GaN was observed.
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