Improved Quantum Efficiency of Organic Light Emitting Diodes with Gradiently Doped Double Emitting Zone

We investigate electroluminescent characteristics of gradiently doped organic light-emitting diodes, which were gradiently doped in both the hole and the electron-transporting layer to form a double emitting zone. The device structure was ITO/(15 nm) CuPc/(60 nm)NPB:rubrene/(30 nm)Alq₃:rubrene (20 nm)Alq₃/(0.5 nm)LiF/Al. We observed that charge carriers were well trapped by the dopant molecules and the main emitting zone was localized at the NPB:rubrene side close to the interface of NPB:rubrene/Alq₃:rubrene. The quantum efficiency (cd/A) was enhanced to 5.89 cd/A at 6 V. We attributed this improvement to the charge carriers trapping and the emitting of the double emitting zone.