Light-Induced Domain Inversion in Mg-Doped near Stoichiometric Lithium Niobate Crystals
-
Abstract
We investigate the influence of visible light on domain inversion in Mg-doped near stoichiometric lithium niobate crystals and find that the switching electric field decreases about 70% above a threshold light intensity. This effect helps us optically control domain switching and produce bulk domain structures on the micrometre scale. Finally, we introduce a model of photo-induced carriers to explain the origin of the reduction of switching electric field.
Article Text
-
-
-
About This Article