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Performance Improvement of GaN Based Schottky Barrier Ultraviolet Photodetector by Adding a Thin AlGaN Window Layer

  • 1Department of Physics, China Agriculture University, Beijing 100083 2State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083

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  • Received Date: March 09, 2007
  • Published Date: May 31, 2007
    Abstract
  • We propose a new structure of GaN based Schottky barrier ultraviolet photodetector, in which a thin n-type AlGaN window layer is added on the conventional n--GaN/n+-GaN device structure. The performance of the Schottky barrier ultraviolet photodetector is found to be improved by the new structure. The simulation result shows that the new structure can reduce the negative effect of surface states on the performance of Schottky barrier GaN photodetectors, improving the quantum efficiency and decreasing the dark current. The investigations suggest that the new photodetector can exhibit a better responsivity by choosing a suitably high carrier concentration and thin thickness for the AlGaN window layer.
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    • References (10)
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