Room-Temperature Ferromagnetic ZnMnO Thin Films Synthesized by Plasma Enhanced Chemical Vapour Deposition Method
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LIN Ying-Bin,
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LU Zhi-Hai,
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ZOU Wen-Qin,
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LU Zhong-Lin,
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XU Jian-Ping,
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JI Jian-Ti,
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LIU Xing-Chong,
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WANG Jian-Feng,
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LV Li-Ya,
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ZHANG Feng-Ming,
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DU You-Wei,
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HUANG Zhi-Gao,
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ZHENG Jian-Guo
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Abstract
Room-temperature ferromagnetic Mn-doped ZnO films are grown on Si (001)
substrates by plasma enhanced chemical vapour deposition (PECVD). X-ray
diffraction measurements reveal that the Zn1-xMnxO films have the single-phase wurtzite structure. X-ray photoelectron spectroscopy indicates the existence of Mn2+ ions in Mn-doped ZnO films. Furthermore, the decreasing additional Raman peak with increasing Mn-doping is considered to relate to the substitution of Mn ions for the Zn ions in ZnO lattice. Superconducting quantum interference device (SQUID) measurements demonstrate that Mn-doped ZnO films have ferromagnetic behaviour at room temperature.
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