Electron Transport in Ga-Rich In_xGa_1-xN Alloys

Resistivity and Hall effect measurements on n-type undoped Ga-rich In_xGa_1-xN (0.06≤x≤e 0.135) alloys grown by metal-organic vapour phase epitaxy (MOVPE) technique are carried out as a function of temperature (15--350K). Within the experimental error, the electron concentration in In_xGa_1-xN
alloys is independent of temperature while the resistivity decreases as
the temperature increases. Therefore, In_xGa_1-xN (0.06≤x≤0.135) alloys are considered in the metallic phase near the Mott transition. It has been shown that the temperature-dependent metallic conductivity can be well explained by the Mott model that takes into account electron--electron interactions and weak localization effects.