Electron Transport in Ga-Rich InxGa1-xN Alloys
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Abstract
Resistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1-xN (0.06≤x≤e 0.135) alloys grown by metal-organic vapour phase epitaxy (MOVPE) technique are carried out as a function of temperature (15--350K). Within the experimental error, the electron concentration in InxGa1-xN
alloys is independent of temperature while the resistivity decreases as
the temperature increases. Therefore, InxGa1-xN (0.06≤x≤0.135) alloys are considered in the metallic phase near the Mott transition. It has been shown that the temperature-dependent metallic conductivity can be well explained by the Mott model that takes into account electron--electron interactions and weak localization effects.
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