Preparation of GaN Thin Films by Reactive Ionized Cluster Beam Technique

GaN thin films were prepared by reactive ionized cluster beam technique at relatively low substrate temperature about 400^oC. The composition, structure and morphology of the films were characterized by x-ray photoelectron spectroscopy, transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The binding energy of N Is electron in the film is 397.85eV which shows the formation of Ga-N bonding. The film has a polycrystalline structure revealed by the measurement results of TEM and SEM. It was found that raising nitrogen ion ratio in the beam is helpful to decrease oxygen content in the film.