Concentration Profiling of Fluorine in F-doped SnO₂ Film

Depth profiles of fluorine in F-doped tin oxide (FTO) films prepared by atmospherical pressure chemical vapour deposition method have been studied by use of ¹⁹F(p,αγ ) ¹⁶O resonance nuclear reactions near 872.1 keV. A proper convolution method was used to get the real depth profiles of fluorine from the measured γ-ray excitation curves. Secondary ion mass spectrometry in conjunction with Rutherford backscattering spectrometry analysis was used to determine the density of the FTO films. It was found that the density of the films is markedly different from an earlier reported value.