ELLIPSOMETRIC SPECTRA AND DAMAGE PROFILES OF ION IMPLANTED SILICON
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Abstract
By means of optimization with a multilayer model, the damage profile can be obtained from the measured data by spectroscopic ellipsometry without stripping. The damage profiles of 40keV As+ implanted Si at doses of 4 x 1013 and 1. 4 x 1014 ions cm-2 are shown and compared with those determined by Rutherford backscattering.
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