Refractive indices of GaInAsSb Quaternary Alloys Grown by Molecular Beam Epitaxy
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Abstract
The refractive indices of molecular beam epitaxy grown GaInAsSb quaternary alloys on semi-insulating GaAs substrates have been determined by Fourier transform infrared spectroscopy measurement at room temperature. Possible reasons of the dispersion characteristics of the refractive index below the bandgap have been discussed in detail.
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References
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