Effect of Growth Temperature on the Band Lineup of Ge/CdTe(111) Polar Interfaces

By using synchrotron radiation photoelectron spectroscopy, the band lineup of Ge/CdTe (111) interfaces grown at different temperatures have been measured. Experimental studies show that the valence band offset of Ge/CdTe (111) interface grown at room temperature is 0.88 ± 0.1 eV, which agrees well with previously reported value. While as for the interface grown at 280°C, an obvious reduction of valence band offsets is observed and attributed to sthe effect of different interface dipole.