Influence of Boron Dopant on Switching Behaviour of Polycrystalline Diamond Thin Films
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Abstract
Switching behaviour of polycrystalline diamond thin films is reported. Boron-doped diamond thin films were deposited by microwave plasma-assisted chemical vapor deposition on silicon substrate. Dependence of switching behaviour on boron impurity has been investigated. The threshold voltage obviously decreases with increasing content of boron dopant.
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