Valence Offsets of Three Series of Alloy Heterojunctions
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Abstract
Electron structure of three series of alloy heterojunctions (GaAs)x(Ge2)1-x/Ge,(AlAs)x (Ge2)1-x/Ge and AlxG1-xAs/Ge are calculated by linear muffin-tin orbital method with atomic-sphere approximation using the average-bond-energy theory in conjunction with a cluster expansion method. The results indicate the variations of ΔEv(x) at heterojunctions (GeAs)x(Ge2)1-x/Ge and (AlAs)x (Ge2)1-x/Ge are nonlinear, which are very different from that of AlxGa1-xAs/Ge.
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