PHOTOLUMINESCENCE STUDIES OF GaAs-GaAlAs MULTIPLE QUANTUM WELLS

Photoluminescence experiments have been performed on GaAg-GaAlAs. quantum well structures with well widths ranging from 40Å to 145Å. Both the intrinsic and extrinsic transitions have been observed. Relatively strong interface-related luminescence is believed to be due to the presence of more trapped impurities at the interfaces.