Thermal Annealing of Si+ Implanted Chemical Vapor Deposition SiO2
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Abstract
Ion implantation was used to bring silicon atoms into chemical vapor deposition SiO2. Two bands of photoluminescence spectra at about 540 and 640 nm were observed from the as-prepared samples. Thermal annealing behavior of the photoluminescence was studied The possible origin of the photoluminescence is discussed.
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