Bound Phonons and Bistability of Donors in Gal-xA1xAs: Te
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Abstract
Bound phonons in Te-doped Gal-xA1xAs were first observed in Raman scattering experiments at low temperature. They are assigned to electrons trapped at an effective-mass-like level. At higher temperatures, this level disappears to the benefit of a stable DX-like deep level. These results reveal a shallow-deep bistable characters of donors in Gal-xA1xAs: Te under some conditions.
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