Resonant Tunnelling Diodes and High Electron Mobility Transistors Integrated on GaAs Substrates

AlGaAs/InGaAs high electron mobility transistors (HEMTs) and AlAs/GaAs resonant tunnelling diodes (RTDs) are integrated on GaAs substrates. Molecular beam epitaxy is used to grow the RTD on the HEMT structure. The current--voltage characteristics of the RTD and HEMT are obtained on a two-inch wafer. At room temperature, the peak-valley current ratio and the peak voltage are about 4.8 and 0.44V, respectively. The HEMT is characterized by a gate length of 1μm, a maximum transconductance of 125mS/mm, and a threshold voltage of -1.0V. The current--voltage characteristics of the series-connected RTDs are presented. The current--voltage curves of the parallel connection of one RTD and one HEMT are also presented.